%0 Journal Article
%A GAN Mingfeng
%A SHEN Jiaying
%A WU Zhenping
%A ZHANG Qingyi
%A WANG Yuehui
%T Self-Driven Solar-Blind Photodetector Based on <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub>/SiC Heterojunction
%D 2022
%R 10.13190/j.jbupt.2021-282
%J Journal of Beijing University of Posts and Telecommunications
%P 44-49
%V 45
%N 3
%X Constructing suitable heterojunction has been proven to be an effective method to improve the performance of photodetectors. To improve the photoelectric performance of Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector, <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub>/SiC heterojunction photodetectors are fabricated based on epitaxial <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> thin films grown on SiC substrate using metal organic chemical vapor deposition technique. The crystal structure and absorption spectrum show that the single-oriented <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> film exhibits strong absorption in the solar blind region. Benefiting from a strong built-in electric field, the device exhibits outstanding self-driven photoelectric characteristics. The stable photoelectric response can be produced without external applied electric field with a low dark current and high sensitivity. At 0V applied voltage, the photo-to-dark current ratio of the device can reach 10<sup>4</sup> under 254nm ultraviolet light illumination, with a responsivity of 0.3mA/W and specific detectivity of 1.45&#215;10<sup>10</sup>cm&#183;√<span style="border-top: 1px solid; padding-top: 0px;">Hz</span>/W. The development of a self-driven solar-blind photodetector can provide theoretical routes and experimental guidance for the preparation of zero-power-consumption detectors.
%U https://journal.bupt.edu.cn/EN/10.13190/j.jbupt.2021-282